Formation of partially coherent antimony precipitates in ion implanted thermally annealed silicon

Abstract

Thermal annealing of a supersaturated solid solution of antimony in silicon results in the formation of partially coherent antimony precipitates. Transmission electron microscopy and microdiffraction studies show the precipitates to be bounded by {112} Si surfaces with the {111} Si and {1̄012} Sb planes coherent across the interface. The role of dislocations in the growth of the precipitates is discussed.