Abstract
The formation of palladium silicide thin films from Pd/Si(110) and Pd/Si(001) systems with and without a Ti intermediate layer has been investigated. The existence of a Ti layer could improve the thermal stability of Pd2Si thin layers in Pd/Ti/Si(001). In addition, an epitaxial or highly oriented Pd2Si layer is formed in Pd/Ti/Si systems. However, the roughness of the Pd2Si/Si interface is observed in Pd/Ti/Si(110) systems, while the flatnesses of the Pd2Si/Si interface is observed in Pd/Ti/Si(001).
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