Formation of p-n Junctions in Semiconductors by the Variation of Crystal Growth Parameters

Abstract

The fluid transport theory of Burton et al. for the variation of the effective distribution coefficient with growth rate and stirring is applied to the growth of semiconductor crystals from a melt containing both donor and acceptor impurities. ``Rate growing,'' or the formation of p-n junctions by varying the growth rate, is considered and the importance of the ratio of melt concentrations is demonstrated. Junction formation by varying the degree of stirring in the melt, or ``stirring modulation'' is also described. General principles are derived and various applications are discussed.