Abstract
ABSTRACTPlanar p-n junctions with Pt silicide contacts have been formed by laser irradiating p-type Si/120Å Sb/400Å Pt composite thin film structures. The samples were prepared in a standard e-beam evaporation system. They were never ion implanted. Laser processing was performed with either a scanning cw Ar laser or a Q-switched Nd:YAG (λ = 0.53 μm) laser which provided 100 nsec long pulses. After the irradiations were performed, a p-type Si/n+Si/Pt-Si structure was present. The n+ region resulted from Sb incorporated in the Si lattice. When the same initial composite was furnace annealed, the Sb diffused to the surface and sublimated, leaving a p-type Si/PtSi near-ohmic contact. Depth profiles of the samples were determined with Auger electron spectroscopy. The structure of the Pt-Si layer was studied using wide film Debye X-ray diffraction. The electrical properties of the junctions were examined by measuring their I-V and C-V characteristics and minority carrier lifetimes. Differences in the structural and electrical properties that resulted from the two types of laser irradiation will be discussed.
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