Abstract
In this study, photoconductor made of amorphous selenium (a‐Se) is studied to improve a sensitivity of vacuum‐tube type photodetectors. An electrochemical process was applied to a‐Se films to form a p‐n structure within the film. The formation of p‐n structure was confirmed by time‐of‐flight secondary ion mass spectroscopy as well as its electronic property. The a‐Se film was then combined into a prototype photodetector, and enhancement of sensitivity was evaluated in terms of nominal quantum efficiency and signal‐to‐noise ratio. The results showed that the formation of a p‐n junction within a‐Se film increased the sensitivity of the photodetector, especially at relatively low operation voltages.
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