Year-end Sale % OFF 
Abstract
Gamma-ray irradiation effects on MOS structures formed on the silicon and the carbon faces of 6HSiC are examined by using high frequency capacitance-voltage method. The accumulation of radiation-induced trapped charges in the oxide near the interface depends on not only the gate bias polarity during irradiation but also the face type of 6HSiC. The fomation mechanisms of the trapped charges are discussed in conjunction with the face type and the bias polarity.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
