Formation of Ordered Silicon Nano-Textures Suitable for Field Emission Applications

Abstract

We report on the use of silicon nano-grass and nano-textured structures for the field emission applications. A triode device, which can be used as a field emission transistor with gate, emitter (cathode) and a collector (anode), has been realized. Anode in this structure is a silicon substrate placed opposite to the silicon grass tips acting as the emitter. The silicon nano grass formation is based on the hydrogen assisted reactive ion etching process where a mixture of O2/H2 and SF6 gases are used in a sequential manner. The results of electrical measurements for this investigation show a sharp rise in the emission current.