Abstract
The paper deals with investigation of silicon nanowires formation by LP CVD method on Si substrate using gold films as a mask. The average diameter of Si nanowires grown by LP CVD was about 60 nm. It was shown that using of Si-Au droplets as the mask allows to obtain vertically aligned silicon nanowires with average diameter of about 60 nm. The kinetics of radial and axial growth was investigated, the growth rates and kinetic coefficient of growth were calculated, which showed a good accordance to experimental data.
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