Abstract
A relationship has been observed between the density of triangular etch pits on (1010) faces of some single-crystal samples of CdS and the relative difficulty encountered in making indium-diffused ohmic contacts to these specimens. Various workers have observed a relationship between etch-pit and dislocation densities in CdS. The results suggest that the important diffusion mechanism in making contacts is by diffusion into dislocations.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
