Formation of non-vertical mesa structures on 4H-SiC RIE method using silicone-organic mask coating

Abstract

The article discusses the possibility of using silicone lacquer as a masking coating when creating micro-dimensional mesa structures on the 4H-SiC surface using the reactive ion-plasma etching method. The etching process was carried out on a setup with an ICP plasma source. The experiments were performed with the aim of determining the dependence of the angle of inclination of the wall of the mesa structure on the parameters of the etching process. The etching results were recorded with a Helius nanolab instrument complex and a Quanta Inspec raster electron microscope.