Abstract
Cluster ions can produce surface craters and amorphous ion tracks in semiconductors. This process in combination with defect mediated diffusion can be applied to fabricate buried nanowires. 1.4 MeV Si2+ ions at low fluences and 400 keV Ni+ ions at high fluence are implanted into Si(100) and annealed at 600°C. NiSi2 nanoclusters are formed and TEM measurements show surface craters of around 30 nm diameter which are followed by amorphous tracks of diameter 15 nm caused by the Si2+ ions in Si substrate. 50 nm long finger like buried vertical nanowires from the silicide clusters are formed along the amorphous track which is due to diffusion of Nickel atoms towards the surface mediated by the defects in the track. It is a step closer to the fabrication of buried nanowires.
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