Abstract
Nickel films were deposited from nickel acetylacetonate vapor on silicon, gallium arsenide, and germanium wafers and SiO2/Si structures, and their composition and properties were studied. Annealing in dimethyldichlorosilane or hexamethyldisilazane vapor exerts a considerable effect on the composition and properties of Ni/Si structures. Films deposited from the gas phase containing nickel acetylacetonate and an organosilicon compound (OSC) were examined. As found by Auger electron spectroscopy with Ar+ion profiling of the surface, nickel silicide films can be obtained by Ni(AcAc)2vapor deposition followed by annealing the resulting nickel film in OSC vapor and by OSC + Ni(AcAc)2vapor deposition.
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