Abstract
Ni was examined as an electrode for n-type Mg2Si. To form the Ni electrodes, two methods, monobloc sintering and a modified electroless Ni (EN) plating method, were adopted. Although the process of EN plating to Mg2Si was formerly believed to be untenable owing to degradation of the matrix during the acidity processes, a promising modified EN plating method was developed. Regarding the adhesive properties, no obvious damage was observed in either Ni/Mg2Si sample after more than 200 h. The observed electrical resistances of the EN plated and monobloc-sintered samples were comparable, with values of 10.2 and 10.5 mΩ, respectively. In addition, the results of the output power measurements gave similar values of 120.9 mW and 120.7 mW for the EN plated and sintered Ni electrodes, respectively.
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