Abstract
The process of GaSe native oxide formation was studied using atomic-force microscopy. It was found that the oxide film growth is accompanied by a work function increase. This increase saturates in several hours. The illumination by 1mW laser at 650nm stimulates the oxidation process. Continuous illumination changes the work function by 1eV and that is 2 times higher than that without irradiation. It is supposed that the oxide formation occurs at edge dislocation lines.
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