Abstract
Exceptional properties and a one dimensional structure make carbon nanotubes (CNTs) a promising candidate for future applications in the electronic industry [1-3]. Because of their smaller dimensions and higher conductivity as compared to copper, multi-walled carbon nanotubes (MWCNT) may increase the bandwidth density of global interconnects [4]. They demonstrate charge carrier mean free paths between 500 nm and 10 μm as compared to 40 nm in metals. CNTs can carry exceptionally high current densities of up to 1010 A cm−2 even at elevated temperatures [5,6]. CNTs are expected to demonstrate resistance to electromigration higher than that of Cu-based interconnects [7].
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