Abstract
Summary form only given. The formation of microstructures in transparent materials (dielectrics and semiconductors) under intense femtosecond laster irradiation is of interest for determining fundamental mechanisms for the appearance of such structures and also from the point of view of practical applications. The two-photon mechanism of laser light absorption, which takes place in semiconductor materials with a relatively narrow forbidden band, allows us to believe that modified structures with dimensions smaller than in the case of linear absorption will be obtained. In this paper we report the results of our investigations of irradiation of As/sub 2/S/sub 3/ by femtosecond laser pulse train. The femtosecond radiation was emitted by a Ti:sapphire based laser oscillator.
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