Abstract
Microcrystalline diamond has been successfully synthesized in a low-pressure inductively coupled plasma using di- t-alkyl peroxide. Di- t-alkyl peroxides are thermally decomposed into acetones and methyl radicals, which presumably serve as precursors for the formation of diamond on the silicon substrate at 943 K and 993 K. The deposits on the substrate were examined by scanning electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy. It was found that the deposits contained a microcrystalline diamond phase even at a low pressure of 11 Pa. Diamond formation over a large area in low-pressure plasmas has been demonstrated by the present novel diamond deposition process using di- t-alkyl peroxide thermally decomposed as a feed gas.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
