Abstract
Magnesium silicide (Mg2Si) is a prospective narrow gap semiconductor for thermoelectric energy conversion at high temperatures. In this work, chemical vapour deposition by pack cementation process was used, for the first time, for the formation of Mg2Si compound. A series of experiments were carried out at temperatures 450°C to 650°C with deposition times at 15 to 180min. As a result thick films have been prepared, depending on growth temperature and deposition time. Mg2Si was formed as a result of the Mg diffusion into the Si matrix. The film thickness increased with the deposition time, and temperature. The identification of these films, with different methods, revealed that they contained only pure Mg2Si phase without any MgO phase.
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