Abstract
Modification of indium sulfide (In2S3) film surface was performed by the treatment in high-density low-pressure inductively coupled argon plasma. The films with thickness of 500–800[Formula: see text]nm were fabricated on glass substrates by the thermal evaporation method and subsequent annealing in sulfur ambience. The plasma treatment of as-grown and annealed films was carried out with argon ions having the energy of 25–200[Formula: see text]eV. Nanostructuring of the film surface took place resulting in the formation of arrays of nanosized indium droplets.
Published Version
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