Abstract
High-resistivity floating-zone silicon (FZ-Si) and n-type (4.5 Ohm·cm) Czochralski silicon (CZ-Si) wafers were irradiated at room temperature with 167 MeV Xe ions to fluences ranging from 5·1010 to 5·1011 cm−2. Temperature dependent photoluminescence (PL) measurements were performed to characterize the as-implanted and annealed silicon wafers. It was found that irradiation with swift heavy ions (SHI) leads to the formation of light-emitting defects in both types of silicon wafers. Low-temperature annealing (400 °C) leads to a significant increase of the photoluminescence intensity. In addition, the photoluminescence decreases for increasing measurement temperatures and eventually quenching is observed for temperatures larger than 80 K. The type of silicon wafer (FZ or CZ) does not significantly influence the defect-related light-emitting properties. This implies that low fluence SHI irradiation is a promising method for creation of light-emitting defects in silicon.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
