Abstract
ITO nanowires could be grown in oxygen-free Ar sputtering gas directly after the formation of ITO films with thicknesses of 10–50 nm using conventional magnetron sputtering. Growth of nanorods occurred at substrate temperatures of about 100°C and higher, whereas nanowires with lengths of 1–10 μm and diameters of roughly 20–200 nm were formed at about 175°C and above. The diameter, length and density of the nanowires could be controlled by varying the sputtering time, substrate temperature, and SnO2 content in the ITO sputtering target.
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