Abstract
Effects of the transmutation products on the nucleation of interstitial loops in aluminum have been investigated by electron microscopy. Zone refined aluminum was pre-irradiated with neutrons, helium, and hydrogen ions at elevated temperature and further irradiated with 200 keV electrons at temperatures between 100–323 K to investigate the formation of the interstitial loops. The loop density showed remarkable enhancement by pre-irradiation and dependence on the electron-irradiation temperature. It was suggested that isolated silicon atoms, helium-vacancy complexes, a hydrogen-vacancy complexes act as nucleation sites for the interstitial loops during the subsequent electron irradiation.
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