Abstract
The effect of post-annealing on InSb island-crystal formation on Se-terminated GaAs, which is used to improve the composition ratio of Sb to In, was examined by using high-resolution scanning electron microscopy and cross-sectional transmission electron microscopy. Post-annealing after InSb growth on Se/GaAs reduces the density of nanocrystals by a factor of about 10 compared with as-grown InSb on Se/GaAs. It also increases island separation. The InSb island-crystal has a smooth terrace with edges a little higher than the inner region. The stoichiometry of nanocrystals was evaluated for the first time by using in situ synchrotron radiation photoelectron spectroscopy. Using this technique, we demonstrated that Sb incorporation occurs during post-annealing and that this drastically improves the stoichiometry of InSb nanocrystals grown on Se-terminated GaAs. As a result, we were able to obtain stoichiometric InSb nanocrystals on Se-terminated GaAs.
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