Abstract
We report on a promising approach for the formation of compound semiconductor two-dimensional photonic crystal slabs utilizing selective-area metal–organic vapor phase epitaxy (SA-MOVPE). The selective-area growth process for the submicron-sized air holes of InP-based semiconductors was investigated on InP(111)A and (111)B substrates with a periodic array of hexagonal SiO2 masks. By optimizing growth conditions, a highly uniform array of hexagonal air holes in InP and InGaAs with a 500 nm pitch was formed on (111)B substrates. We also fabricated air-hole arrays with InP/InGaAs/InP double heterostructures on InP(111)B, and confirmed photoluminescence from an InGaAs quantum well at low temperatures.
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