Abstract
The formation of InAs self-assembled islands on the InP(311)B surface in Stranski–Krastanow growth mode is investigated. First, we study the island nucleation on (100) and (311)B surfaces by means of low-temperature photoluminescence. We show that the InAs deposition at a substrate temperature of 480°C leads to formation of islands during the deposition on (311)B InP surface. On the other hand, morphological transformation occurs only during an annealing stage on (100) surfaces. Such a difference is related to the lower surface energy cost of island formation on InP(311)B. Then, we study the island characteristics as a function of substrate temperature and growth rate. Smaller islands are achieved at lower growth temperature. It should be related to a fast nucleation step, followed by a diffusion controlled island growth stage. Finally, we investigate the island stability by performing annealing after growth. The island height increases and density decreases as a function of the annealing time. This implies that Oswald ripening takes place and thus island arrays on (311)B surface do not correspond to a free energy minimum. We conclude that the island formation on InP(311)B is mainly governed by kinetic effects.
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