Formation of In-As complexes in silicon observed by the perturbed-angular-correlation technique.

Abstract

The formation of In-As pairs and clustering of As atoms in Si was studied via their electric field gradients by use of the perturbed-angular-correlation technique and $^{111}\mathrm{In}$ as probe atoms. Clustering of As atoms strongly depends on As concentration and temperature treatment. The observed pairing between In and As atoms seems to be typical for the interaction between acceptor and donor atoms in Si and it explains the earlier observation that the presence of donor atoms influences the lattice site of acceptor atoms.