Formation of In–O films by Ar + ion beam assisted reactive deposition

Abstract

The electrical resistivity and transmissivity of In–O films prepared by Ar + ion beam assisted reactive deposition were investigated. In this process, Ar + ion beam irradiation with an energy of 10 keV was carried out simultaneously during In evaporation in an O 2 atmosphere. The In–O films prepared at several Ar + ion current densities of 3–20 μA cm −2 showed a polycrystalline structure in the XRD measurement, which had a strongly preferred orientation of In 2O 3 (110). However, the XRD pattern of the In–O film prepared without Ar + ion beam assistance corresponding to a reactive evaporation method showed a broad peak of In (101). Resistivity and transmissivity of this film prepared without Ar + ion assist were 7.0×10 −4 Ωcm and about 35%, respectively. The resistivity of the film prepared with an Ar + ion current density of 20 μA cm −2 increased to 0.06 Ωcm, while the transmissivity also increased to 80%. It is considered that the relationship of resistivity and transmissivity was dependent on the film composition and structure controlled by Ar + ion irradiation.