Formation of high-density stacking faults in ceramic films induced by Ti transition layer

Abstract

Stacking faults and twins are extremely difficult to form in ceramic materials. At the same time, previous studies often used the metal transition layer to improve the film-substrate bonding force, but ignored its influence on the film structure and mechanical properties. Our research shows that a large number of stacking faults are formed in the Ti transition layer grown on (110) MgO substrate, which induces high density tacking faults in nitride ceramic films with high stacking fault energy, thereby increasing the nanoindentation hardness of the ceramic films. Whether the stacking faults in the Ti transition layer can enter the ceramic films depends on the stacking fault density. This work is of great significance for studying how to induce the formation of stacking faults and twins in ceramics with high stacking fault energy to improve the mechanical properties.