Abstract
Abstract
Highlights
A large number of growth studies have been conducted over the past decade for various twodimensional (2D) materials including graphene and hexagonal boron nitride (h-BN), with metal substrates being often employed. 1,2,3 The presence of the metal is generally acknowledged to provide some catalytic activity for the decomposition of the precursor molecules and the subsequent formation of the graphene or h-BN films.[4,5]
It has been shown that the catalytic activity of metals such as Cu and Ni plays an important role in the decomposition of borazine.[6,7,39]
atmospheric pressure chemical vapor deposition (APCVD)-grown graphene samples on Cu were exposed to borazine at 900 C and 1000 C to incorporate BN on the surface
Summary
A large number of growth studies have been conducted over the past decade for various twodimensional (2D) materials including graphene and hexagonal boron nitride (h-BN), with metal substrates being often employed. For application in electronic devices, thin films of 2D materials must be removed from those substrates and transferred onto an insulating material.[9,10] For heterostructures, containing thin layers of different materials, the number of steps needed to build up the structure can be relatively large. Possible contamination induced by the transfer process, for each transfer step, might be deleterious to the electrical properties of the final device.[11,12] For this reason, a number of authors have investigated the growth of different 2D layers, one on top of the other, with the goal of epitaxially forming a heterostructure.[13,14]
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