Abstract
We report a simple and manageable growth method for placing dense three-dimensional Gequantum dot (QD) arrays in a uniform or a graded size distribution, based on thermallyoxidizing stacked poly-SiGe in a layer-cake technique. The QD size and spatialdensity in each stack can be modulated by conditions of the Ge content in poly-Si1 − xGex, oxidation, and the underlay buffer layer. Size-dependent internal structure, strain, andphotoluminescence properties of Ge QDs are systematically investigated. Optimization ofthe processing conditions could be carried out for producing dense Ge QD arrays tomaximize photovoltaic efficiency.
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