Formation of GaN thin film on silicon substrate by gallium oxide ammoniation

Abstract

Gallium Nitride (GaN) thin film was successfully grown by ammoniation of the chemically vapour deposited Gallium oxide (Ga2O3) through the nitridation process. Ga2O3 was deposited on silicon substrate using simple vapor deposition method in a tubular furnace. The nitridation of the deposited layer was achieved at low temperature of 1273 K. The structural, optical, morphological and electrical properties of the as grown GaN thin film was studied by X-ray diffraction, SEM, AFM, Photoluminescence and I–V characteristics. The result revels that the grown thin film have a wurtzite crystal structure with a layer thickness of ∼5 μm and roughness of about 0.3 nm. Photoluminescence spectra show broad emission peak with various peaks associated in it. Corresponding I–V characteristics of the GaN schottky diode was recorded and the ideality factor was calculated. Photo response of the fabricated diode was also recorded.