Formation of GaN films by Ga ion direct deposition under nitrogen radical atmosphere

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Formation of hydrogen-free gallium nitride (GaN) thin layers by ion beam direct deposition method under nitrogen ambient was investigated. After a Ga ion beam at an energy of 100eV was irradiated on a chip of a Si(111) wafer under a nitrogen gas pressure of 2×10−4Torr using a tungsten hot filament, the composition and the chemical bonding nature of the deposited materials were investigated by x-ray photoelectron spectroscopy (XPS). Although the deposited material using a filament power of 250W showed almost the metallic gallium nature, the XPS spectra of the deposited Ga using the hot filament at a power of 300W was very similar to that of an epitaxially grown GaN reference, indicating the possibility of the formation of GaN thin layer using the present method. Because the pure N2 gas was used as the nitrogen source, no impurity fragments should be incorporated in the deposited materials. As a result, it is shown that the formation of hydrogen-free GaN layers is possible by Ga ion beam direct deposition under nitrogen atmosphere using N2 gas and the hot filament.