Abstract
Abstract A kinetic Monte Carlo model of droplet epitaxy is suggested and realized. A basis for the Monte Carlo model is the vapor–liquid–solid mechanism. The proposed model was used for the analysis of GaAs nanostructure formation mechanism during crystallization of Ga drops under the arsenic flux. The dependences of the grown structure morphology on temperature, As 2 flux intensity and GaAs substrate surface orientation were analyzed. Depending on temperature and arsenic flux intensity, different shapes of nanostructures (crystal dots, core–shell compact clusters, nanoholes and nanorings) were achieved. A lack of etching of GaAs substrates with (1 1 1)А and (1 1 1)В surface orientations by liquid gallium was revealed. Nanohole and nanoring formation was observed only on substrates with (0 0 1) surface orientation. The kinetics of nanoring formation was examined.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
