Abstract
Polycrystalline GaAs was obtained by heat-treatment of sequentially electrodeposited As and Ga layers. The single layers were electrodeposited galvanostatically from alkaline Ga and acidic As solutions. The structural, morphological and compositional evolution of two-layers brought about by heat-treatment at various temperatures as a function of time was studied by SEM-EDX, laser profilometry and X-ray diffractometry. The formation of GaAs occurs by reaction-diffusion. The value of the Ga diffusion coefficient was determined in the temperature range 80–190°C and correspondingly resulted to vary from 1.4×10−21 to 4.8×10−18m2s−1. Furthermore the activation energy (100kJmol−1) and the frequency factor (9.1×10−7m2s−1) of the process were evaluated. The results are discussed in terms of structural and morphological factors and related to the results on the Ga-Sb, In-As and In-Sb systems previously studied in our group.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
