Formation of F-doped ZnO transparent conductive films by sputtering of ZnF 2

Abstract

Fluorine-doped ZnO transparent conductive thin films were successfully deposited on glass substrate by radio frequency magnetron sputtering of ZnF 2. The effects of rapid thermal annealing in vacuum on the optical and electrical properties of fluorine-doped ZnO thin films have been investigated. X-ray diffraction spectra indicate that no fluorine compounds, such as ZnF 2, except ZnO were observed. The specimen annealed at 500 °C has the lowest resistivity of 6.65 × 10 − 4 Ω cm, the highest carrier concentration of 1.95 × 10 21 cm − 3 , and the highest energy band gap of 3.46 eV. The average transmittance in the visible region of the F-doped ZnO thin films as-deposited and annealed is over 90%.