Formation of epitaxially strained islands by controlled annealing

Abstract

A three-dimensional continuum method is developed to simulate the formation of epitaxially strained islands during controlled annealing. In the formulation, the strain energy density, surface energy and surface energy anisotropy are taken into account. Our simulations show that no surface energy anisotropy leads to spherical caps while high anisotropy leads to elongated islands. Under the present framework, a relatively uniform and regular island array can be obtained at a certain annealing time from a random surface. An almost perfectly uniform and regular island array can be obtained at a certain annealing time from a random surface with one dominant wavelength, which is in a specific range; for long-time annealing, these island arrays are undergoing ripening.