Formation of electrically active defects in neutron irradiated silicon

Abstract

The high-resolution photoinduced transient spectroscopy (HRPITS) has been applied to study formation of electrically active defects produced by 1 MeV neutrons in phosphorus-doped silicon. A number of traps with the activation energy in the range of 0.01–0.52 eV related to shallow donors, bistable C iC s pairs, divacancies V 2 as well as to VO i, VP, V 2O and C iO i complexes are found. The effect of the oxygen concentration in the starting material on the concentration of VO i complexes is shown. The dependence of the concentration of VO i complexes as well as the concentrations of V 2 − −/− and V 2 0/+ on the neutron fluence is also presented.