Formation of electrically active centers in silicon irradiated with electrons and then annealed at temperatures of 400–700°C

Abstract

The effect of irradiation with electrons on the formation of quenched-in donors in silicon is studied. It is found that n-and p-type regions are formed in the bulk of single-crystal silicon as a result of irradiation with electrons and subsequent annealing at a temperature of 450°C. The concentration of charge carriers in the regions of both types increases as the radiation dose and the annealing duration increase, which indicates that not only quenched-in donors but also quenched-in acceptors are formed. Nonuniformity in the distribution of the acceptor and donor centers correlates with fluctuations of the oxygen concentration in silicon.