Abstract
Double ring formation on Co2MnSi (CMS) films is observed at electrical breakdown voltage during local anodic oxidation (LAO) using atomic force microscope (AFM). Corona effect and segregation of cobalt in the vicinity of the rings is studied using magnetic force microscopy and energy dispersive spectroscopy. Double ring formation is attributed to the interaction of ablated material with the induced magnetic field during LAO. Steepness of forward bias transport characteristics from the unperturbed region of the CMS film suggest a non equilibrium spin contribution. Such mesoscopic textures in magnetic films by AFM tip can be potentially used for memory storage applications.
Highlights
Double ring formation on Co2MnSi (CMS) films is observed at electrical breakdown voltage during local anodic oxidation using atomic force microscope (AFM)
Formation of nanoscale oxide patterns on metal and semiconductor surfaces by oxidation using a conductive scanning probe under atomic force microscope (AFM) is termed as Local anodic oxidation (LAO). This phenomena was first observed by Dagata et al [1] on Si (111), followed by similar experiments on several bulk metal surfaces[2, 3], semiconductors [4, 5] and supported thin films.[6,7,8]. All these experiments have suggested that the electrochemical reaction between the AFM tip and the surface under water meniscus is very crucial for the formation of oxide patterns.[9, 10]
We report our results on AFM tip based anodic oxidation of CMS and the effect of induced magnetic field on pattern formation during dielectric breakdown
Summary
Double ring formation on Co2MnSi (CMS) films is observed at electrical breakdown voltage during local anodic oxidation using atomic force microscope (AFM). We report our results on AFM tip based anodic oxidation of CMS and the effect of induced magnetic field on pattern formation during dielectric breakdown.
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