Abstract
Molecular beam epitaxy (MBE) of Si atoms onto a Si(001) 1×2 surface is investigated using reflection electron microscopy. A 1×2 surface with wide 1×2 and narrow 2×1 terraces is prepared by passing a direct current from the down side to the up side at the surface steps. After sample heating to 900 °C using an alternating current without deposited Si atoms, the 1×2 surface changes to a double-domain surface, where the width of the 2×1 terraces is approximately equal to that of the 1×2 terraces. With MBE, however, the 1×2 surface remains the 1×2 surface, and the double-monolayer-height islands with an approximately circular shape are stably formed on it.
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