Formation of dot arrays with a pitch of20 nm × 20 nm for patterned media using 30 keV EB drawing on thin calixarene resist

Abstract

We studied the possibility of achieving very fine-pitch dot arrays with a pitch of20 nm × 20 nm using 30 keV electron beam (EB) drawing on negative calixarene resist. In order toform such patterns, we studied the dependence on resist thickness of the dot sizeand the packing. We propose EB drawing on an extremely thin film for veryhighly packed dot-array formation. Our experimental results demonstratethe possibility of forming highly packed dot-array patterns with a pitch of20 nm × 20 nm and a resist thickness of about 13 nm, which corresponds to about1.6 Tbits in−2.