Abstract
The time-resolved photoconductivity technique has been applied for the investigation of the long-distance effects of Ar + ion implantation on 300 μm thick Si wafers. The experimental results show that during and after rear-side ion implantation at a dose of φ = 10 13−10 15 ions/cm 2 and an ion beam current j ≅ 1 μA/cm 2, the front-surface carrier recombination velocity decreases considerably. In the same way, at doses φ > 2 × 10 15 ions/cm 2, carrier lifetime degradation at a distance of up to 50 μm from the implanted surface is observed.
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