Abstract
Formation of Dislocations During Phosphorus Doping in the Technology of Silicon p-i-n Photodiodes and their Influence on Dark Currents
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https://doi.org/10.21272/jnep.14(4).04015
Copy DOIPublication Date: Jan 1, 2022 | |
Citations: 9 |
Formation of Dislocations During Phosphorus Doping in the Technology of Silicon p-i-n Photodiodes and their Influence on Dark Currents
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