Abstract
ABSTRACTIn the present work, we examine the formation of defects on the sidewall slope in 1 μm - thick GaAs layers regrown on GaAs/AlGaAs heterostructures. Site-specific TEM specimens of sidewall slopes are obtained using focused ion beam combined with lift-out method. TEM analysis shows planar defects, such as stacking faults and microtwins, dislocations and large twinned areas, nucleating on the AlGaAs surfaces. SIMS and EDX reveal an increase in carbon and oxygen at the interface. The defect density increased with Al content exceeding 1010 cm-2 on Al0.4Ga0.6As. The defect formation is related to the oxidation of Al-containing surfaces.
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