Abstract
Preparation conditions of device-quality CuInSe2 (CIS) and CuIn1-xGaxSe2 (CIGS) thin films were studied. We formed CIS and CIGS films by annealing different types of precursor films, such as Gu/In stacked films and Cu–In–Se co-deposited films, under H2Se atmosphere. We obtained CI(G)S films with large grain size using precursors prepared at 200°C. The grain sizes of CI(G)S film using stacked precursors were larger than those using co-deposited precursors. Use of co-deposited precursors reduced formation of MoSe2 at Mo/CI(G)S boundary during selenization process. Fill-factor (FF) exceeding 0.7 was obtained for CIS cells using co-deposited precursors prepared at substrate temperature of 200°C.
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