Formation of CuIn(1-x)GaxS2 Thin Films through a Solution Approach: Nonlinear Variation of Fermi Energy and Band Gap Bowing.

Abstract

We report the formation of CuIn(1-x)GaxS2 (CIGS) thin films through a solution approach, namely, successive ionic layer adsorption and reaction (SILAR) technique. The obtained films possessed a high degree of crystallinity indicating the efficacy of the deposition process in forming CIGS films. A series of alloys have evidenced band gap bowing, that is, the optical band gap does not follow a linear relationship with the composition; the band gap of an intermediate compound is higher than that is interpolated from a linear relationship or Vegard's law. The composition-dependent band gap followed a quadratic relationship evidencing reverse band gap bowing, manifesting an upward convex behavior. With scanning tunneling spectroscopy (STS) and thereby the density of states of the disordered semiconductors, we have observed a bowing behavior in the transport gap as well and identified the roles of the conduction and valence bands in yielding the bowing phenomenon. The results are explained in terms of the anionic and cationic orbitals involved in forming the two bands. The STS studies have been analyzed further to derive the Urbach energy of the disordered semiconductors. When STS studies are combined with Kelvin probe force microscopy, which in effect provides the Fermi energy of the alloyed semiconductors, we could derive the band edges and the Fermi energy of the whole series in an absolute energy scale during the manifestation of the bowing phenomenon.