Abstract
Boron nitride films are synthesized by rf magnetron sputtering boron targets where the deposition parameters of gas pressure, flow and composition are varied along with substrate temperature and applied bias. The films are analyzed using Auger electron spectroscopy, transmission electron microscopy, nanoindentation, Raman spectroscopy and X-ray absorption spectroscopy. These techniques provide characterization of film composition, crystalline structure, hardness and chemical bonding, respectively. Reactive, rf-sputtering process parameters are established which lead to the growth of crystalline boron nitride (BN) phases. The deposition of stable and adherent boron nitride coatings consisting of the cubic phase requires 400°C substrate heating and the application of a 300-V negative bias.
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