Abstract
In this study, two types of Cu source, namely Cu and CuS, are introduced and compared in fabrication of Cu2ZnSnS4 thin films and solar cells with stacked layers SnS/Cu(S)/ZnS by CBD-annealing route, including the comparison of morphologies, chemical composition, phase structure and photoelectric properties. The results show that Cu2ZnSnS4 thin films with high quality of morphology and phase purity that fabricated by stack SnS/Cu/ZnS are more proper for the high performance of Cu2ZnSnS4 thin film solar cells. The Cu2ZnSnS4 solar cells fabricated with the stack SnS/Cu/ZnS by chemical bath deposition-annealing route exhibit an improved conversion efficiency of 3.79% relative to that using the stack SnS/CuS/ZnS.
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