Formation of Cu1-xGex Nanoplatelets Using LPCVD of Ge2Me6 or Ge2Me6/Et4Pb Mixture

Abstract

Unlike synthesis of nanowires (1D nano-objects) the synthesis of nanoplatelets (2D nano-objects) has not been performed frequently. Herein, we report on the synthesis of Cu – Ge based on nanoplatelets with a high surface-to-volume ratio prepared by low pressure chemical vapor deposition (LPCVD) of Ge 2 Me 6 and a mixture of Ge 2 Me 6/ PbEt 4. Nanostructured deposits are composed of Cu 1-x Ge x nanoplatelets, Ge nanowires and Ge nanoparticles. The nanoplatelets, which have the lateral size up to several tens of micrometers and thickness of 100–400 nm, belong to the cubic α phase of Cu 91 Ge 9 alloy ( Ge admixture in cubic Cu ) and hexagonal ζ phase of Cu 85 Ge 15 alloy. Nanowires composed of cubic Ge have a diameter of about 30 nm and length of several tens of micrometers. Lead does not enter any of these phases due to Pb – Cu and Pb – Ge immiscibility; therefore, it was observed as separate nanoparticles.