Abstract
We fabricated metal-oxide-semiconductor (MOS) structures containing Cr nanocrystals (NCs) as a charge trapping layer and investigated their memory characteristics. Symmetric and large flat-band voltage shifts were observed for forward and reverse gate voltage sweeps due to the charging/discharging of Cr NCs. Memory capacitors with Cr NCs of 4 8 nm in size showed the best memory characteristics, with a memory window of 7.3 V for a sweep voltage range of ±7 V and a stored electron charge density of 3.1 ◊ 10 12 /cm 2 . Smaller Cr NCs seemed to suer from surface oxidation of the NCs. Compared with higher work function Pt, Cr NC memory capacitor, with an intermediate work function, showed a faster program/erase speed and better charge retention. We discuss how the work function of a metal NC aects the memory characteristics.
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